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July 1, 1994Journal of Vacuum Science & Technology B Microelectronics and Nanometer Structures Processing Measurement and Phenomena

Mechanisms of strained island formation in molecular-beam epitaxy of InAs on GaAs(100)

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Authors

PCP. ChenQXQiwei XieBeijing University of TechnologyAMA. MadhukarUniversity of Southern California

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Chen et al. (1994) studied this question.

synapsesocial.com/papers/6a945ca14ec1eb7af13eda36https://doi.org/10.1116/1.587803
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