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We present experimental and theoretical investigations of the bias-dependent spectral shift of the photoresponse in InAs/InxGa1−xAs quantum-dots-in-a-well structures. Experimental results show that the wavelength response of the transition from the quantum dot ground state to quantum well states can be Stark-shifted by ∼15% by changing the applied bias between −1 V and +1 V. A theoretical model based on the 8-band k · p method fits our experimental data well using realistic dot parameters. We also demonstrate an increase in the operating wavelength and a reduced bias-dependent spectral shift for samples containing dots formed by depositing less InAs during growth.
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Aivaliotis et al. (2007) studied this question.
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