Nickel induced crystallization of α- Si gate electrode at 500 °C and MOS capacitor reliability

We present a study of MOS capacitor reliability when nickel (Ni) is used to crystallize a phosphorus-doped, amorphous silicon (/spl alpha/-Si)-gate electrode by metal-induced crystallization (MIC). The dopant in the gate electrode was also activated during the MIC. We report that there was an increase of about 0.1 eV in the gate electrode workfunction due to Ni. Through capacitance-voltage ( C-V), current-voltage (I-V) and charge-to-breakdown (Q/sub BD/) measurements, we show that the Ni MIC in the gate electrode does not degrade the MOS capacitor reliability.