What question did this study set out to answer?

To model quantum transport in resonant-tunneling diodes using a self-consistent Wigner formalism and evaluate the resulting current-voltage characteristics and transient behavior.

April 15, 1989Physical review. B, Condensed matter

Self-consistent study of the resonant-tunneling diode

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Authors

NKN.C. KluksdahlArizona State University AKA.M. KrimanUniversity of Notre Dame DFD. K. FerryArizona State University

Discussion

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Implication

Simulation study demonstrates intrinsic bistability and high-frequency negative resistance in resonant-tunneling diodes, highlighting spacer layer effects.

Key Points

To model quantum transport in resonant-tunneling diodes using a self-consistent Wigner formalism and evaluate the resulting current-voltage characteristics and transient behavior.
Applied the Wigner-function approach coupled self-consistently with device electrostatic potentials to model quantum electron transport.
Evaluated boundary conditions, electron quantization in triangular cathode wells, and the effects of undoped spacer layers alongside finite relaxation times.
Simulated transient switching currents across operational frequencies up to and exceeding 2 THz.
Calculated I-V curves demonstrated intrinsic bistability in the negative-differential-conductivity region driven by internal charge storage and potential shifting.
Cathode electron depletion and quantization enhanced valley current and reduced the peak-to-valley ratio, whereas undoped spacer layers suppressed deep quantum well formation and sharpened the bistable transition.
Transient switching dynamics exhibited inductive characteristics and negative resistance at operational frequencies below 2 THz.

Cite This Study

Kluksdahl et al. (1989) studied this question.

synapsesocial.com/papers/6a946059cc4384ea2cc522cd https://doi.org/10.1103/physrevb.39.7720

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April 15, 1989Physical review. B, Condensed matter

Self-consistent study of the resonant-tunneling diode

View Full Paper

Ask AI

Bookmark

Authors

NKN.C. KluksdahlArizona State University AKA.M. KrimanUniversity of Notre Dame DFD. K. FerryArizona State University

Discussion

Member takes

Implication

Simulation study demonstrates intrinsic bistability and high-frequency negative resistance in resonant-tunneling diodes, highlighting spacer layer effects.

Key Points

To model quantum transport in resonant-tunneling diodes using a self-consistent Wigner formalism and evaluate the resulting current-voltage characteristics and transient behavior.
Applied the Wigner-function approach coupled self-consistently with device electrostatic potentials to model quantum electron transport.
Evaluated boundary conditions, electron quantization in triangular cathode wells, and the effects of undoped spacer layers alongside finite relaxation times.
Simulated transient switching currents across operational frequencies up to and exceeding 2 THz.
Calculated I-V curves demonstrated intrinsic bistability in the negative-differential-conductivity region driven by internal charge storage and potential shifting.
Cathode electron depletion and quantization enhanced valley current and reduced the peak-to-valley ratio, whereas undoped spacer layers suppressed deep quantum well formation and sharpened the bistable transition.
Transient switching dynamics exhibited inductive characteristics and negative resistance at operational frequencies below 2 THz.

Cite This Study

Kluksdahl et al. (1989) studied this question.

synapsesocial.com/papers/6a946059cc4384ea2cc522cd https://doi.org/10.1103/physrevb.39.7720

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