Time constants for voltage transients following high energy ion strikes on static memories are determined from a series of experiments measuring cross sections for single-event upset. For a given strike location within the circuit, the transient time constant saturates with increasing deposited energy. These maximum transients, for strikes at the two known sensitive areas, 'off' p-channel drain and 'off' n-channel drain, were measured at 6 and 0.8 ns, respectively.>
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Weaver et al. (1988) studied this question.
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