Experimental testing demonstrates single-event burnout in power MOSFETs during nanosecond inductive voltage spikes, highlighting the necessity of disciplined flyback control.
A power MOSFET demonstrated destructive single-event effect (SEE) during ion irradiation in a switching circuit. Further investigation showed that the inductive load causing a spike in the drain-to-source voltage (VDS) that exceeded the manufacturer's rating for several nanoseconds was enough to allow single-event effect (SEB). These results indicate that SEB may occur in a very short window and flyback is critical for disciplined power supply design.
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Scheick et al. (2017) studied this question.
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