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In this paper, a procedure is proposed to predict the long-term behavior of commercial metal oxide semiconductor field effect transistors not only after irradiation, as previously published, but during irradiation at a given temperature. This procedure is validated on three different commercial power MOSFETs. In all three cases, the predicted and experimental results are in good agreement. The application of the procedure is discussed.
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Saigné et al. (2000) studied this question.
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