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Recombination dynamics of excitonic transitions in GaN homoepitaxial layers has been studied by means of time-resolved luminescence spectroscopy. An excitation-density-dependent transition of the dominant radiative recombination process at 3.471 eV from donor-bound excitons to biexcitons was clearly observed in the temporal behavior. In addition, double-exponential decay of biexciton luminescence was observed, which is one of the characteristics of biexciton luminescence at high excitation densities.
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Yamada et al. (1999) studied this question.
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