Biexciton Luminescence from GaN Epitaxial Layers

Excitonic luminescence from GaN epitaxial layers has been studied under high-density excitation. The first experimental evidence for biexciton formation in GaN was obtained. The binding energy of the biexciton was estimated to be 5.3 meV. Therefore, the ratio of biexciton binding energy to exciton binding energy was approximately 0.19.