X-ray diffraction mapping of strain fields and chemical composition of SiGe:Si(001) quantum dot molecules

A variety of surface morphologies can be formed by controlling kinetic parameters during heteroepitaxial film growth. The system reported is a Si0.7Ge0.3 film grown by molecular beam epitaxy at 5500.2em0ex^∘C and a 10.3em0ex∕s deposition rate, producing quantum dot molecule (QDM) structures. These nanostructures are very uniform in size and shape, allowing strain mapping and chemical composition evaluation by means of anomalous x-ray diffraction in a grazing incidence geometry. Tensile and compressed regions coexist inside QDMs, in accordance with the finite-element calculations of lattice relaxation. The Ge content was found to vary significantly within the structures, and to be quite different from the nominal composition.