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An analysis of the Fowler-Nordheim tunneling (FNT) theory and its application to temperature-dependent current-voltage characteristics of very thin SiO 2 films on silicon, is presented. The final results are believed to provide the most complete examination in FN emission theory and predict the breakdown electric field in thin SiO 2 films. The role of the roughness, at the Si-SiO 2 interface, in determining the FNT current in these structures is also discussed.
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Ravindra et al. (1992) studied this question.
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