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The valence subband dispersion of GaAs/AlGaAs quantum wells is measured with meV accuracy using the recombination of hot electrons at neutral acceptors. This precision, in combination with polarization-dependent matrix elements, allows direct observation and measurement of the warping. The measurements, for in-plane wave vectors which extend over a substantial fraction of the Brillouin zone, are shown to be in very good agreement with k{·}p calculations.
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Kash et al. (1992) studied this question.
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