On GaAs (110) substrates a distinct step structure exists on the surface during molecular beam epitaxy of GaAs/AlAs multilayer structures which is monitored in situ by reflection high-energy electron diffraction. This peculiar surface structure results in thicker GaAs (AlAs) channels associated with the step planes giving rise to pronounced redshifts of the luminescence. The observation of hot exciton luminescence indicates increased exciton stability and exciton phonon interaction due to strong lateral localization of the excitons in the GaAs channels. The measured optical anisotropy is in agreement with the lateral potential introduced by the faceting of the GaAs/AlAs interface.
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Nötzel et al. (1992) studied this question.
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