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Hot-carrier stressing was carried out on 1- mu m n-type MOSFETs at 77 K with fixed drain voltage V/sub d/=5.5 V and gate voltage V/sub g/ varying from 1.5 to 6.5 V. It was found that the maximum transconductance degradation Delta G/sub m/ and threshold voltage shift Delta V/sub t/, do not occur at the same V/sub g/. As well, Delta K/sub t/ is very small for the V/sub g/>
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Nguyen-Duc et al. (1988) studied this question.
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