In this paper we examine how single-event upsets (SEU) and related charge collection characteristics in microelectronic circuits and devices depend on the depth of charge deposited by a picosecond laser pulse. Charge tracks of variable length are generated by tuning the laser wavelength through the semiconductor absorption spectrum. Our results show that the variable-length charge tracks provide a unique and sensitive probe of the charge collection volume of a micro-electronic circuit/device. In favorable cases we show how the wavelength tunability of the laser can be used to provide an experimental estimate of the charge collection depth.
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Melinger et al. (1998) studied this question.
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