The sensitivity to heavy ions of nonhardened 0.25-/spl mu/m partially depleted (PD) silicon on insulator (SOI) and bulk technologies is studied with experiments, device, and circuit simulations. Comparable threshold linear energy transfer (LET) are found for both technologies. Nevertheless, SOI saturated cross section is much lower than bulk one. For nonhardened technologies, SOI is then less sensitive than bulk to heavy ions.
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Gasiot et al. (2002) studied this question.
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