Continuous spectra of energy and cross-sections of surface states on the germanium–germanium dioxide interface

At the first time the problem of interpretation of the experimental data of the trapping process obtained by low-frequency field effect measurements and the kinetics of the thermal generation process from the same system of surface states is set and solved. The requirements are shown to be satisfied of a surface state system exponentially distributed both on energy and the capture cross-sections. The quantitative parameters of the energy distribution estimated independently through both experiments coincide within an error. The process of the thermal generation from the surface states is found to be more complicated than it has been assumed before. Therefore the distribution of the capture cross-sections has to be considered. The obtained results are discussed under assumptions on the disorder of the upper layers of a semiconductor as a reason of the surface state occurance.