Aluminum oxide (Al2O3) silicon MOS structures formed by DC reactive sputtering of pure aluminum in a low pressure oxygen ambient are subjected to heat treatments in various environments, and the interface characteristics of these structures are evaluated. The surface state density at the Al2O3-Si interface is found to be diminished by annealing in a nitrogen ambient, and be reduced further by additional heat treatment in a hydrogen ambient over a comparatively wide energy range.
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Hattori et al. (1971) studied this question.
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