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New experimental results on surface flashover are reported for high field silicon-dielectric systems. Different conditions of the lateral surface, contacts and ambient dielectrics have been studied. The strong influence of the semiconductor quality, and that of the dielectric properties, on the prebreakdown and breakdown response of the system, is demonstrated. All experimental results strongly support the conclusion that surface flashover in silicon systems is a physical process totally different from semiconductor surface breakdown. This conclusion has important practical application in the improvement of the performance of photoconductive power switches, severely limited by premature breakdown effects.>
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Gradinaru et al. (1994) studied this question.
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