Monolithic integration of GaAs/GaAlAs buried-heterostructure orthogonal facet laser and optical waveguide

Monolithic integration of a quarter-circle laser evanescently coupled to an optical waveguide located below the active layer is demonstrated on GaAs. The curved resonator consists of a 45-μm-long straight part and a quarter circle with a curvature radius of 150 μm. The component exhibits a threshold current of 50 mA in a pulsed regime. A 10 mW emission is measured from a 415-μm-long tangential straight waveguide for an injection current of 140 mA.