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Topographic changes and surface contact potential variations near defects on the surface of AlGaAs/GaAs double heterojunction structures grown on Ge substrates are studied using scanning force microscope and electrostatic force microscope. Comparison with transmission electron microscopy results indicates that these surface defects are directly related to stacking faults originated from the GaAs/Ge interface. The surface contact potential inhomogeneities near these defects are consistent with variations in Si dopant concentration.
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Xu et al. (1999) studied this question.
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