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5 μ m thick SmCo films were deposited onto Si substrates using triode sputtering. A study of the influence of deposition temperature (Tdep⩽600°C) on the structural, magnetic, and mechanical properties has shown that optimum properties [highest degree of in-plane texture, maximum in-plane coercivity and remanence (1.3 and 0.8T, respectively), and no film peel-off] are achieved for films deposited at the relatively low temperature of 350°C. This temperature is compatible with film integration into microelectromechanical systems. The deposition rate was increased from 3.6to18μm∕h by increasing the surface area of the target from 7to81cm2 while keeping the target potential fixed. Mechanically intact films could be prepared by deposition onto prepatterned films or deposition through a mask.
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