Optimum Growth Conditions of GaAs(111)B Layers for Good Electrical Properties by Molecular Beam Epitaxy

Growth conditions of GaAs layers grown by molecular beam epitaxy (MBE) on (111)B-oriented GaAs substrates were optimized by surface morphology observation and Hall measurement. Good surface morphology was obtained by use of 1.5° off-oriented (111)B substrates. This paper reports for the first time that electron mobilities as high as those on (100) substrates can be obtained even at growth temperature as low as 530°C if the off-oriented (111)B substrates are used, whereas one higher than 600°C is necessary to obtain the same electron mobility on exactly (111)B-oriented substrates. MESFET's and Schottky diodes fabricated on the layer grown at the optimized condition show high electron mobility and suggest low concentration of defects.