Stability of oxide and sulfide phosphor thin films as the emitting layer of TFEL devices

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EL characteristics of single‐insulating‐layer type TFEL devices with a Zn2SiO4: Mn or ZnGa2O4: Mn phosphor thin‐film emitting layer have been described in comparison with those of a ZnS:Mn TFEL device. Unsealed, these devices were life‐tested under room‐temperature operation in the atmosphere. Differences in the degradation mechanism and EL characteristics between the Mn‐activated sulfide and oxide phosphor emitting layers were observed. The oxide phosphor emitting layers were stable in comparison with the ZnS:Mn thin‐film emitting layer, for use in the atmosphere. It can be concluded that green‐emitting ZnGa2O4: Mn oxide phosphor is very stable for use as the emitting layer of TFEL devices.