The measurements of optically generated terahertz emission from Au∕GaAs interfaces are investigated in detail. We observe that, under high laser power excitation, terahertz signals from bare GaAs wafers and Au∕GaAs samples exhibit an opposite polarity. The polarity-flip behaviors are also observed in temperature-dependent and femtosecond pump-generation studies of the Au∕GaAs interfaces.
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Shi et al. (2006) studied this question.
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