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In this paper, a polycrystalline cadmium telluride/silicon (C dT e/Si) solar cell based on SiO /T iO 2 2 distributed Bragg reflector (DBR) is proposed and investigated using calibrated simulations with experimental data of previous fabrication device. At first, by inserting the SiO /T iO 2 2 DBR, the conversion efficiency is increased by about 25% compared with the conventional C dT e/Si solar cell with similar dimen- sions. In addition, the carrier lifetime of absorber layer can provide an improved conversion efficiency of 15% compared with the C dT e/Si conventional solar cell. The obtained open circuit voltage, short circuit current density, fill factor and con- version efficiency of proposed solar cell structure were about 1.2V, 39.5mA/cm , 0.95 and 28.5% under global AM 1.5 conditions, respectively. The results strongly con-2 firm that the polycrystalline C dT e/Si solar cell based on SiO /T iO2 2 DBR seems to be the most optimal choice for converting the solar energy in high efficiency photovoltaics systems.
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Rouhbakhshmeghrazi et al. (2020) studied this question.
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