Electron-Induced Single-Event Upsets in 45-nm and 28-nm Bulk CMOS SRAM-Based FPGAs Operating at Nominal Voltage

Electron-induced single-event upsets (SEUs) are observed in 45-nm and 28-nm bulk complementary metal-oxide semiconductor static random-access memory-based field-programmable gate arrays (FPGAs) operating at nominal voltage at a 20-MeV electron LINAC facility. Upsets are recorded in the embedded random-access memory (RAM) and configuration RAM of the FPGAs. This paper is the first to show electron-induced SEUs in a commercial-off-the-shelf device operating at nominal voltage. The measured electron-induced SEU cross sections are between 10- 18and 10- 17cm2/bit depending on the device and memory cell tested. Monte Carlo simulations show that the upsets are due to rare indirect ionization events.