Enhanced Mobility in C8-BTBT Field-Effect Transistors With Iodine-Doping

This is the authors' abstract. We don't add key points for this paper.

Organic field-effect transistors (OFETs) are widely applied in the fields of flexible display and wearable devices. However, its mobility optimization is a major bottleneck. Here, enhanced mobility in organic dioctylbenzothienob en-zothiophene (C8-BTBT) OFETs is demonstrated with iodine doping. By optimizing the doping concentration, the carrier concentration at the metal/semiconductor interface markedly increases due to tunneling effects, generating a contact resistance (RC)reduced by~ 10^2, and increasing mobility from 1.4 to 10.4 cm2V^-1s^-1. This work proposes an effective method to enhance the mobility of C8-BTBT OFETs.