A kinetic criterion for the stability of the single-height steps at slightly misoriented from (001)Si crystal faces has been derived on the basis of a quantitative treatment of the combined action of the surface diffusion and anisotropic growth kinetics. Double-height steps are predicted to develop during crystallization below some critical temperature that depends on the degree of misorientation. A further decrease of the temperature enhances the nucleation and growth of two-dimensional islands that leads to the simultaneous existence of 1 × 2 and 2 × 1 reconstructed domains.
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S. Stoyanov (1990) studied this question.
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