Microwave PtSi-Si Schottky-barrier-detector diode fabrication using an implanted active layer on high-resistivity silicon substrate

A surface-oriented planar Schottky diode for use as a detector diode on Si monolithic microwave integrated circuits (MMIC's) was developed. The active n-on-n/sup +/ and contact n/sup +/ regions were doped on the high-resistivity silicon substrate using phosphorus ion implantation. The PtSi-Si barrier was formed by metallurgical interaction between pure platinum film and silicon. The process technology developed for the Schottky-detector diode fabrication is precise, simple, and cheap, and is suitable for mass production. The typical measured cutoff frequency of a zero-biased fabricated Schottky diode is 118 GHz.