Determination of Deformation Potential Constants from the Electron Cyclotron Resonance in Germanium and Silicon

Precise determinations of the deformation potential constants \(ᵤ\) and \(d\) of the conduction band edge are carried out at liquid helium temperature both for germanium and for silicon by means of electron cyclotron resonance. \(ᵤ\) is determinable from the resonance intensity measurements under the application of uniaxial stress, while \(d\) from the anisotropy of linewidth for pure specimens with the help of the already obtained value of \(ᵤ\). The Herring-Vogt equation under the classical condition \(kBT/ω{>}1\) is used for deriving \(d\). An extreme care must be taken if one uses the measured absolute linewidth to get \(ᵤ\) and \(d\). The obtained values are \(ᵤ{=}19.3± 0.7\) eV and \(d{=}-12.3{±}0.5\) eV for Ge, while \(ᵤ{=}9.0{±}0.4\) eV and \(d{=}-6.0{±}0.8\) eV for Si.