Chemical vapor deposition at high temperatures provided the deposited atoms with the necessary surface mobility to ensure crystallinity and epitaxial growth. The use of high‐temperaure CVD in the deposition of high‐Tc superconducting ceramics and covalent materials such as diamond (see Figure) and boron nitride is reviewed, and, for example, the methods used to maintain the terahedral arrangement of neighboring atoms during deposition discussed. magnified image
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Gómez‐Aleixandre et al. (1995) studied this question.
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