Photosensitive fluorinated polyimides with a low dielectric constant based on reaction development patterning

The fluorinated polyimide PI(6FDA/HFBAPP) was prepared by the reaction of 4,4′‐(hexafluoroisopropylidene)diphthalic anhydride (6FDA) with 2,2‐bis[4‐(4‐aminophenoxy)phenyl]hexafluoropropane (HFBAPP) in 1‐methyl‐2‐pyrrolidone/toluene. A multiblock copolyimide with both fluorinated and rigid‐rod segments, PI(6FDA/HFBAPP)(BPDA/2‐DMB), was prepared by the addition of a second dianhydride, 3,3′,4,4′‐biphenyltetracarboxylic dianhydride (BPDA), and a second diamine, 2,2′‐dimethylbenzidine (2‐DMB), to the polyimide main chain. The potential lithographic performance of photosensitive polyimides composed of nonphotosensitive fluorine‐containing polyimides and photosensitive diazonaphthoquinone (DNQ) was studied on the basis of a new imaging principle recently proposed by our laboratory, that is, reaction development patterning. Neat PI(6FDA/HFBAPP) showed a low dielectric constant (ϵ) of 2.41 and a low dissipation factor (tan δ) of 0.0027 at 20 GHz, and a 10‐μm resolution of the fluorinated polyimide/DNQ system was demonstrated with reactive development with a solution including ethanolamine after ultraviolet exposure. Although slight changes in the dielectric properties were observed in the presence of DNQ residues, these values (ϵ = 2.63 and tan δ = 0.0033 at 20 GHz) were low enough for use in microelectronic applications. However, PI(6FDA/HFBAPP)(BPDA/2‐DMB), having a lower coefficient of thermal expansion (CTE; 33 ppm/°C) than PI(6FDA/HFBAPP) (49 ppm/°C), exhibited good positive photosensitivity, whereas the relatively low‐CTE multiblock copolyimide displayed a much higher ϵ value (3.48 at 1 MHz) than the highly fluorinated polyimide (2.88 at 1 MHz). A film consisting of PI(6FDA/HFBAPP)(BPDA/2‐DMB) and the remaining DNQ derivatives showed a CTE value comparable to that of the neat polyimide film.