We demonstrate the thermally activated degradation pathways of the ITO-coated glass/CuPc (copper phthalocyanine)/NPB ( N , N '-di(naphthalene-1-yl)- N , N '-diphthalbenzidine)/Alq 3 (tris(8-hydroxyquinoline aluminium) device by using variable temperature tapping mode atomic force microscopy. It is observed that the initially morphological change of the top Alq 3 surface occurred at about 75°C. NPB gradually erupted from the Alq 3 capping layer at 120°C. The NPB layer and the Alq 3 layer were gradually mixed with increase in temperature from 130°C. Simultaneously, de-wetting took place at the interface of CuPc/NPB. Using conducting atomic force microscopy we see that morphological change in the device leads to a variation in current–voltage characteristics of the degraded ITO/CuPc/NPB/Alq 3 device. The results should shed light on the thermally activated degradation mechanisms of organic light-emitting diodes.
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Xu et al. (2004) studied this question.
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