SiGe/Si bifurcation optical activeswitch based on plasma dispersion effect

Based on the plasma dispersion effect of Si1-xGex, 2 × 2 bifurcation optical active switches have been fabricated, in which the Si1-xGex was grown by molecular beam epitaxy. At a 36 mA injection current, the device reaches maximum optical switching. The crosstalk is less than –11 dB and the insertion loss is 3.8 dB. The measured response time is <100 ns.