Synapse
⌘+K
Synapse
PulseExploreClubsResearchersJournals
Instagram
HomeClubsExplore
April 1, 1990IEEE Electron Device Letters

75-GHz f/sub T/ SiGe-base heterojunction bipolar transistors

View Full Paper
Ask AI
Bookmark
Share

Authors

GPG.L. PattonGlobalFoundries (United States)JCJ.H. ComfortIBM (United States)BMB.S. MeyersonJohannes Kepler University of Linz

Discussion

Loading...

Member takes

Implication

Key Points

Key points are not available for this paper at this time.

Cite This Study

Patton et al. (1990) studied this question.

synapsesocial.com/papers/6a74bf981646b2abe5033727https://doi.org/10.1109/55.61782
View Full Paper
Ask AI
Bookmark
Share

Also Consider

Synapse has enriched 5 closely related papers on similar clinical questions. Consider them for comparative context:

  1. 1Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors produced by limited reaction processing1989 · 171 citations
  2. 2Small-geometry, high-performance, Si-Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors1989 · 66 citations
  3. 3Low-temperature silicon epitaxy by ultrahigh vacuum/chemical vapor deposition1986 · 498 citations
  4. 4Ge<i>x</i>Si1−<i>x</i> strained-layer heterostructure bipolar transistors1988 · 95 citations
  5. 5Graded-SiGe-base, poly-emitter heterojunction bipolar transistors1989 · 88 citations