We describe a monolithic InGaAs-InP focal plane array for near-infrared imaging. The array consists of an InGaAs p-i-n diode as a photodetector integrated with an InP junction field effect transistor (JFET) as a switching element for each pixel. In order to minimize the drain and gate leakage to achieve high-detection sensitivity, a novel -p-encapsulation" JFET was employed. Arrays as large as 16/spl times/16 were fabricated, consisting of 528 devices integrated into a single array with >99% individual device yield. This array represents significant progress in InP-based materials and integration technologies.
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Kim et al. (1996) studied this question.
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