A 320×256 element hybrid infrared array is presented which consists of In0.78Ga0.22As photodiodes grown by molecular beam epitaxy on a GaAs substrate. The interconnection yield of the hybrid indium-bump process is above 97%. Electro-optical sensor characteristics are discussed.
No takes yet. Share an insight, caveat, or question.
Merken et al. (2002) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context:
More from Electronics Letters