Answers are grounded in this paper and cite their sources.
A technique for fabricating low-loss and polarisationindependent channel waveguides in silicon is reported. The waveguides are obtained by Ge-indiffusion using either a GeSi alloy or a system of alternating Ge and Si layers. Typical fabrication parameters for single-mode waveguides are given.
No takes yet. Share an insight, caveat, or question.
Schüppert et al. (1989) studied this question.
Synapse has enriched 5 related papers. Consider them for comparative context: