High-speed InGaP/GaAs heterojunction bipolar transistors (HBT's) with a small emitter area are described. WSi is used as the base electrode to fabricate HBT's with a narrow base contact width and a buried SiO2structure. An HBT with an emitter area of 0.8×5 μm exhibited an fTof 105 GHz and an fmaxof 120 GHz. These high values are obtained due to the reduction of C/sub BC/ by using buried SiO2with a narrow base contact width, indicating the great potential of GaAs HBT's for high-speed and low-power circuit applications.
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OKA et al. (1997) studied this question.
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