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Langmuir–Blodgett (LB) films for high‐resolution resists for the preparation of integrated circuits with higher densities are reviewed briefly. A technique based on the polymerization of monomeric LB films and a newer one based on the two‐dimensional cross‐linking of a polymeric LB film are described. It is demonstrated that cross‐linkable polymeric LB films have the ability to create high‐resolution molecular patterning with nanometer (layer) thickness. Examples of patterns produced with such films are presented.
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Aoki et al. (1997) studied this question.
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