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Drift mobility in high resistivity semiconductors can be determined from xerographic time of flight (XTOF) techniques whose principles are different from the well known Haynes-Shockley experiment. A practical and inexpensive XTOF apparatus which can be utilized in investigating high resistivity semiconductors is described in detail. Some examples of XTOF transient current waveforms in amorphous selenium-based photoreceptors and method of analysis are presented.
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S. M. Vaezi-Nejad (1987) studied this question.
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