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A diamond based heterostructure diode containing a p-type doped diamond active layer and an n-type doped ultra-nano-crystalline top layer has been investigated. Analysis suggests that the configuration is that of a merged diode, containing two areas of different interfacial barrier potentials in parallel related to the ultra-nano-crystalline grains and the grain boundaries, respectively. Thus this heterostructure may be ideally suited to combine low forward losses with high blocking voltages in diamond high power rectifiers.
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Kohn et al. (2006) studied this question.
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