We present the results of in situ reflectance-difference spectroscopy (RDS) investigations of GaAs grown by molecular beam epitaxy at low substrate temperatures (LT-GaAs). The linear electro-optic (LEO) features in the vicinity of the E₁ and E₁+Δ₁ optical transitions are found to depend on growth temperature Tg and V:III flux ratio. The observed LEO amplitude was found to decrease linearly with the measured neutral As antisite point defect concentration [AsGa⁰] for growth temperatures 200^∘C<Tg<300^∘C. This behavior relies on the influence of As antisite defects on the optical response of GaAs. The nonstoichiometry of LT-GaAs can be estimated in real time through the LEO amplitude vs [AsGa⁰] relation. This makes RDS very attractive not only for in situ growth control but also for real-time tuning of the electronic properties of LT-GaAs.
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Αποστολόπουλος et al. (1999) studied this question.
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