Metal‐Organic CVD of Conductive and Crystalline Hafnium Nitride Films

HfN films have been deposited on Si, SiO2, and Al2O3 substrates by MOCVD using Hf(NMe2)4 and Me2NNH2 (DMHy) in the deposition temperature range 600–800 °C. The resistivity and morphology of the films strongly depends on the deposition temperature. A cubic polycrystalline and conductive HfN film deposited at 800 °C shows the lowest resistivity, of approximately 1020 μΩ·cm. The HfN film was slightly nitrogen‐rich and the film density was 12.9 g cm–3. It was found that DMHy and the high deposition temperature were important factors for the growth of good‐quality HfN films.