Properties of very thin thermally nitrided-SiO/sub 2//Si interface based on conductance and hot-electron injection techniques

The properties of a thermally nitrided SiO/sub 2//Si interface were investigated by conductance and hot-electron injection techniques. The results showed that a strong correlation exists between nitridation conditions and interface properties. The nitridation greatly increased the hole capture cross section as well as the nonuniformity of surface potential, whereas the hardness of the interface against hot-electron bombardment was enhanced. These phenomena may be attributed to the nitridation-induced structural change rather than the hydrogen and oxygen-hydrogen radicals. Nitridation at low temperature, over a long period of time, is preferable for improving the interfacial characteristics.>