The capacity of fiber-optic telecommunication systems can be increased by higher data rate signaling. We present key analog and digital circuits which find application as building blocks in future very high data rate systems. The circuits are fabricated in our indium phosphide (InP) double-heterojunction bipolar transistor (DHBT) technology. The physical properties of the InP material system, notably high breakdown and high electron mobility, enable functions that are not accessible with current silicon-based high-speed technologies, including SiGe. Device and circuit results are presented, and we report on transmission system experiments conducted with these InP DHBT circuits.
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Weimann et al. (2009) studied this question.
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