We have developed a distributed amplifier for a LiNbO/sub 3/ modulator driver using double-doped AlGaAs-InGaAs-AlGaAs pseudomorphic high electron mobility transistors (p-HEMTs). By using a stabilization and negative resistance control technique with source inductance and grounded coplanar waveguided lines, we obtained a gain of 15 dB, a bandwidth of 54 GHz, and 6-V/sub PP/ output. These results indicate that our circuit is a leading candidate for use as a LiNbO/sub 3/ modulator driver in 40-Gb/s fiber-optic communication systems.
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Shigematsu et al. (2002) studied this question.
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