Answers are grounded in this paper and cite their sources.
n‐MOSFET channel lengths have been determined from SEM cross‐sectional examination and utilizing two different chemical etchants. The two etchants are ( i ) to stain and ( ii ) to etch source/drain n‐doped regions. Agreement with electrical measurements of the effective channel lengths was obtained only with the staining method.
No takes yet. Share an insight, caveat, or question.
Tseng et al. (1987) studied this question.
Synapse has enriched 10 related papers. Consider them for comparative context: