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A combination of x-ray standing-wave measurements and first-principles total-energy calculations have determined the surface relaxation of the clean CdTe(110) surface. These two methodologies directly determine the local atomic geometry and therefore provide a model-independent means of verifying the results obtained indirectly from elastic low-energy electron-diffraction (ELEED) studies. By comparing our results for this strongly ionic material (Phillips ionicity f=0.72) with the results of numerous earlier studies of less ionic III-V compounds, we are able to assess the influence of ionicity on the degree of relaxation for the cleavage faces of zinc-blende semiconductors. Our measurements and calculations indicate that, contrary to a previous theoretical study but in agreement with ELEED, the relaxation is approximately independent of the semiconductor ionicity. Our model-independent measurements yield a vertical buckling Δ_1,⊥=0.120±{}0.023 (in units of the lattice constant a=6.482 {}), which agrees well with our calulated buckling of 0.114.
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Kendelewicz et al. (1995) studied this question.
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